The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface
نویسندگان
چکیده
In this study, monocrystalline silicon was ablated by a single 1030 nm femtosecond laser pulse. Variable fluence (0.16–3.06 J/cm2) used, and two ablation thresholds (0.8 1.67 were determined experimentally. A two-temperature model established based on the dynamic optical model, carrier density phase explosion for comparison with experimental results. The melting (0.25 vaporization (0.80 when lattice temperature reached boiling points, so as to overcome latent heat. Finally, depth calculated using threshold 1.5 J/cm2. comparisons show that proposed can predict obtained
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ژورنال
عنوان ژورنال: Journal of manufacturing and materials processing
سال: 2023
ISSN: ['2504-4494']
DOI: https://doi.org/10.3390/jmmp7020068